SBT5551 transistor equivalent, npn silicon transistor.
* high collector breakdown voltage : VCBO = 180V, VCEO = 160V
* Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
* Complementary pair with SBT5401
Orde.
* General purpose amplifier
* High voltage application
Features
* high collector breakdown voltage : VCBO = 180V, VCEO = 160V
* Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
* Complementary pair with SBT5401
Ordering I.
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